Samsung's Advanced Memory Technology Production Improves

According to a report from Sedaily cited by TrendForce, Samsung has seen better production results for its advanced memory technology. The company's latest sixth-generation 10 nm DRAM, known as 1c DRAM, now boasts yield rates of 50-70% during testing. This marks a significant improvement from last year's results, which were below 30%. While competitors SK Hynix and Micron continue to use 1b DRAM technology for HBM4 products, Samsung has chosen to develop the newer 1c DRAM, a riskier move that could lead to greater rewards due to the improved production rates. This allows Samsung to expand its manufacturing operations, with plans to ramp up 1c DRAM production at its Hwaseong and Pyeongtaek facilities, with expansion activities set to begin before the end of the year.

These advancements also support Samsung's HBM4 production schedule, as the company aims to start mass production of HBM4 products later this year. However, industry experts caution that the product is still in its early stages and requires ongoing monitoring. Originally, Samsung had planned to begin mass-producing sixth-gen 10 nm DRAM by late 2024, but instead opted to redesign the chip, causing delays of over a year. This decision was made to achieve better performance and yields. The new DRAM products will be produced at Samsung's Pyeongtaek Line 4 facility, catering to both mobile and server applications. Meanwhile, HBM4-related production will take place at Pyeongtaek Line 3.